University of Birmingham > Talks@bham > Condensed Matter Physics Seminars > Single electron transistors: a simple downscaling?

Single electron transistors: a simple downscaling?

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  • UserDr. Thierry Ferrus, Hitachi Cambridge Laboratory
  • ClockFriday 03 June 2011, 14:00-15:00
  • HousePhysics East 217.

If you have a question about this talk, please contact Elizabeth Blackburn.

Since the discoveries made by Bardeen in 1947, transistor sizes have been decreasing continuously to reach a few tens of nanometers. At that scale, the energy necessary for an electron to tunnel into the structure could be larger than the thermal broadening so that single electron tunnelling events could be detected, and the well-known Coulomb Blockade effect could be observed. This property led to the development of single electron transistors, an extremely precise electrometer. Although most of their characteristics could be described classically, measurements at low temperature also show quantum properties. I will give a general review on device fabrication and I will present potential applications for these structures by enlightening their transport properties at low temperature.

Related papers :

A. Rossi et al, Appl. Phys. Lett. 98, 13, 133506 (2011); Appl. Phys. Lett. 97, 22, 223506 (2010)

T. Ferrus et al, J. Appl. Phys. 106, 3, 033705 (2009); arXiv:0907.2635 (2010)

This talk is part of the Condensed Matter Physics Seminars series.

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