Using Optical Nanocavities To Improve Memristive Switches

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• Giuliana Di Martino, University of Cambridge
• Wednesday 14 November 2018, 14:00-15:00
• Watson Building LT C (G24).

If you have a question about this talk, please contact Dr Miguel Navarro-Cia.

One of the most promising contenders for ultralow-energy electronic devices is resistive switching memory (RRAM) which delivers sustainably-scalable ‘neuromorphic’ computing, potentially capable of reducing energy consumption in IT by >50%. Understanding the nanoscale kinetics of the switching mechanisms is needed to enable high-endurance devices – only this can unlock their integration into fast, low-energy, logic-in-memory architectures. RRA Ms are currently studied by electron microscopy however this is destructive, invasive, and under drastically different conditions, so is not sufficient for developing true understandings. Using the ultra-concentration of light I recently achieved, I develop innovative fast ways to study real-time movement of individual atoms that underpins this new generation of ultra-low energy memory nano-devices, thus overcoming the limitations of traditional investigation techniques and opening up new routes to sustainable future IT.

This talk is part of the Metamaterials Research Group Seminars series.

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• Bham Talks
• Metamaterials Research Group Seminars
• Watson Building LT C (G24)
• What's on in Physics?

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